Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223 IRFL014NTRPBF
- RS-stocknr.:
- 257-5817
- Fabrikantnummer:
- IRFL014NTRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 2,13
(excl. BTW)
€ 2,58
(incl. BTW)
Voeg 360 eenheden toe voor gratis bezorging
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- Plus verzending 4.930 stuk(s) vanaf 12 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,213 | € 2,13 |
*prijsindicatie
- RS-stocknr.:
- 257-5817
- Fabrikantnummer:
- IRFL014NTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET Fifth Generation | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET Fifth Generation | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
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