Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223 IRFL014NTRPBF
- RS-stocknr.:
- 257-5817
- Fabrikantnummer:
- IRFL014NTRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 2,13
(excl. BTW)
€ 2,58
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 4.660 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,213 | € 2,13 |
*prijsindicatie
- RS-stocknr.:
- 257-5817
- Fabrikantnummer:
- IRFL014NTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET Fifth Generation | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET Fifth Generation | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Gerelateerde Links
- Infineon HEXFET Fifth Generation Type N-Channel MOSFET 55 V SOT-223
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
