Infineon HEXFET Type N-Channel MOSFET, 295 A, 40 V, 7-Pin TO-263 IRFS7437TRL7PP
- RS-stocknr.:
- 257-5829
- Artikelnummer Distrelec:
- 304-40-544
- Fabrikantnummer:
- IRFS7437TRL7PP
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,74
(excl. BTW)
€ 6,94
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 784 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,87 | € 5,74 |
| 20 - 48 | € 2,605 | € 5,21 |
| 50 - 98 | € 2,435 | € 4,87 |
| 100 - 198 | € 2,265 | € 4,53 |
| 200 + | € 2,095 | € 4,19 |
*prijsindicatie
- RS-stocknr.:
- 257-5829
- Artikelnummer Distrelec:
- 304-40-544
- Fabrikantnummer:
- IRFS7437TRL7PP
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 231W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.54mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 231W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.54mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
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- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
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