Infineon HEXFET N-Channel MOSFET, 120 A, 40 V Enhancement TO-220 IRFB7440PBF

RS-stocknr.:: 257-9359
Fabrikantnummer:: IRFB7440PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 120 A, 40 V Enhancement TO-220 IRFB7440PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 52,50

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€ 63,50

(incl. BTW)

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Plus verzending 150 stuk(s) vanaf 02 november 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,05	€ 52,50
100 - 200	€ 0,84	€ 42,00
250 - 450	€ 0,788	€ 39,40
500 - 950	€ 0,735	€ 36,75
1000 +	€ 0,683	€ 34,15

*prijsindicatie

RS-stocknr.:: 257-9359
Fabrikantnummer:: IRFB7440PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	2.50mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 2.50mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFB7440PBF

Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IRFB7440PBF

This MOSFET is a through‑hole N‑channel switching device designed for high‑current power applications. It operates over a wide temperature range and conforms to RoHS environmental restrictions. The package facilitates mounting on heatsinking surfaces for power dissipation management and discrete assembly in conventional circuits.

Features and Benefits:

• 2.50mΩ low Rds(on) for reduced conduction losses
• 40V drain-source limit enabling mid‑voltage systems
• 120A continuous current handling for sustained loads
• Enhancement‑channel operation for straightforward gate drive
• 1.3V forward voltage supporting efficient body‑diode conduction

Applications

• Suitable for high‑current MOSFET use in power supplies
• Ideal for MOSFETs in motor drivers (40V, 120A)
• Used with TO‑220 through‑hole N‑channel MOSFET 40V layouts
• Can be used as a HEXFET 2.5mΩ low Rds(on) MOSFET replacement
• Employed in circuits requiring high‑temperature MOSFET operation (-55°C to 175°C)

What temperature range can it reliably operate within?

It operates across -55°C to 175°C, covering low‑temperature starts and high‑temperature operation.

What mounting method is required for thermal management?

It is supplied in a TO‑220 through‑hole package intended for attachment to external heatsinks or chassis.

What type of channel and switching mode does it use?

The device is an N‑channel enhancement‑mode transistor that requires a gate‑source drive to conduct.

Is it suitable for automotive‑qualified installations?

It is not specified as meeting automotive standards and should be evaluated against vehicle‑specific requirements.

Does it meet environmental directive requirements?

It is RoHS‑compliant, indicating restriction of certain hazardous substances.