Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263 IRFS7540TRLPBF
- RS-stocknr.:
- 257-9440
- Fabrikantnummer:
- IRFS7540TRLPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,26
(excl. BTW)
€ 11,205
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,852 | € 9,26 |
*prijsindicatie
- RS-stocknr.:
- 257-9440
- Fabrikantnummer:
- IRFS7540TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Maximum Power Dissipation Pd | 160W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Maximum Power Dissipation Pd 160W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
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