Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN
- RS-stocknr.:
- 258-3922
- Fabrikantnummer:
- IQE013N04LM6CGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 3.485,00
(excl. BTW)
€ 4.215,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,697 | € 3.485,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3922
- Fabrikantnummer:
- IQE013N04LM6CGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TTFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TTFN | ||
Series IQE | ||
Mount Type Surface | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET 40V in a 3.3x3.3 PQFN Source-Down Centre-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience. Moving the inverter from the handle into the head simultaneously minimizes the volume of the power tool motor housing while keeping the torque of the tool at a reasonably high level for quick and easy action.
High current capability
More efficient use of PBC area
Highest power density and performance
Optimized footprint for MOSFET parallelization with centre-gate
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