Infineon IQE Type N-Channel MOSFET, 205 A TSON
- RS-stocknr.:
- 258-3920
- Fabrikantnummer:
- IQE013N04LM6ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 3.480,00
(excl. BTW)
€ 4.210,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,696 | € 3.480,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3920
- Fabrikantnummer:
- IQE013N04LM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 205A | |
| Series | IQE | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 205A | ||
Series IQE | ||
Package Type TSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power-MOSFET is best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
superior thermal performance in RthJC
Optimized layout possibilities
Standard and centre-gate footprint
High current capability
More efficient use of PCB area
Highest power density and performance
Optimized footprint for MOSFET parallelization with Centre-Gate
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