Infineon HEXFET Type N-Channel MOSFET, 186 A, 150 V Enhancement TO-247 IRF150P221AKMA1

Bulkkorting beschikbaar
Bekijk bulkkorting

Subtotaal (1 tube van 25 eenheden)*

€ 112,83

(excl. BTW)

€ 136,53

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 25 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks
Per stuk
Per tube*
25 - 25€ 4,513€ 112,83
50 - 100€ 4,287€ 107,18
125 +€ 4,107€ 102,68

*prijsindicatie

RS-stocknr.:
258-3956
Fabrikantnummer:
IRF150P221AKMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

186A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.50mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 186A Continuous Drain Current - IRF150P221AKMA1


This MOSFET is a high-current N-channel switching transistor designed for power electronics applications. It operates as an enhancement-mode device with a drain-source voltage rating suitable for medium-voltage circuits. The component tolerates broad thermal extremes, making it applicable in demanding industrial environments where thermal endurance and efficient conduction are required.

Features and Benefits:


• 4.50mΩ Rds(on) delivering reduced conduction losses
• 186A continuous drain current enabling high-current switching
• 150V Vds supporting medium-voltage power stages
• -55°C to +175°C rating allowing wide temperature operation
• 1.2V forward voltage assisting fast-recovery performance

Applications


• Suitable for high-current DC-DC converters and supplies
• Ideal for motor drive inverter output stages
• Used with power rectifier assemblies requiring fast recovery
• Can be used for industrial switching in harsh temperatures
• Suitable for surface-mount power-board implementations

What package format does it use for board mounting?


It is supplied in a TO-247 package designed for surface-mount attachment.

Is this component compliant with modern hazardous-substances regulation?


It carries RoHS approval indicating restriction of specific hazardous substances.

What channel conduction type should designers expect for gate control?


The device operates in enhancement mode as an N-channel transistor requiring positive gate drive to conduct.

What is the specified maximum temperature for continuous operation?


The upper operating limit is +175°C as specified for high-temperature use.

What is the typical forward voltage associated with recovery events?


The forward voltage for conduction and recovery is specified at 1.2V.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.