Infineon BSL Type P-Channel MOSFET, 6 A, -20 V Enhancement, 6-Pin TSOP BSL207SPH6327XTSA1

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Verpakkingsopties
RS-stocknr.:
260-5069
Fabrikantnummer:
BSL207SPH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

-20V

Series

BSL

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSL Series MOSFET -20V Maximum Drain-Source Voltage, 6A Maximum Continuous Drain Current - BSL207SPH6327XTSA1


This MOSFET is a P‑channel enhancement‑mode transistor designed for surface‑mount applications where Compact power switching is required. It operates across a wide ambient range and is suited to circuits needing controlled P‑channel switching with moderate current capability. The device is supplied in a TSOP package and complies with RoHS restrictions.

Features and Benefits:


• Low on‑resistance reduces conduction losses
• -20V rating enables negative‑voltage switching
• 6A continuous drain current supports moderate loads
• Operates from -55°C to +150°C for wide temperature ranges
• Surface mounting in TSOP saves board area

Applications


• Suitable for power‑management switching in consumer electronics
• Ideal for polarity‑protection and reverse‑battery circuits
• Used with battery‑powered systems requiring Compact SMD parts
• Can be used for load switching in industrial control modules
• Suitable for thermal‑stress environments requiring wide temperature tolerance

What is the device’s thermal endurance in harsh conditions?


It is rated to function between -55°C and +150°C, demonstrating tolerance to wide temperature excursions.

Which mounting style is required for assembly?


The package is TSOP configured for surface‑mount placement on printed circuit boards.

How does the channel orientation affect circuit design?


As a P‑channel enhancement‑mode device it switches when the gate is driven relative to the source with appropriate polarity for high‑side configurations.

Is this component compliant with material restriction regulations?


It meets RoHS requirements restricting certain hazardous substances.

What electrical limits define its switching capability?


The transistor is rated to -20V between drain and source and can continuously carry up to 6A of drain current.

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