ROHM RD3P100SN Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 RD3P100SNTL1
- RS-stocknr.:
- 264-3813
- Fabrikantnummer:
- RD3P100SNTL1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,65
(excl. BTW)
€ 6,85
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.375 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,13 | € 5,65 |
| 50 - 95 | € 1,008 | € 5,04 |
| 100 - 245 | € 0,792 | € 3,96 |
| 250 - 995 | € 0,778 | € 3,89 |
| 1000 + | € 0,662 | € 3,31 |
*prijsindicatie
- RS-stocknr.:
- 264-3813
- Fabrikantnummer:
- RD3P100SNTL1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P100SN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P100SN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ROHM power MOSFET with low on resistance, suitable for switching, it is drive circuits can be simple and Pb-free plating and RoHS compliant.
Fast switching speed
Parallel use is easy
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