ROHM RD3 Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 RD3P04BBKHRBTL
- RS-stocknr.:
- 646-544
- Fabrikantnummer:
- RD3P04BBKHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,64
(excl. BTW)
€ 9,24
(incl. BTW)
Voeg 120 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 90 stuk(s) vanaf 13 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,764 | € 7,64 |
| 100 - 490 | € 0,672 | € 6,72 |
| 500 - 990 | € 0,604 | € 6,04 |
| 1000 + | € 0,478 | € 4,78 |
*prijsindicatie
- RS-stocknr.:
- 646-544
- Fabrikantnummer:
- RD3P04BBKHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 100 volt 36 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
Gerelateerde Links
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3L04BBLHRBTL
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- ROHM RD3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- ROHM RD3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL
- ROHM RD3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- ROHM AG194FPD3HRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) AG194FPD3HRBTL
- ROHM AG185FGD3HRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) AG185FGD3HRBTL
- ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08DBLHRBTL