ROHM R6013VNX Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 265-5417
- Fabrikantnummer:
- R6013VNXC7G
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 1000 eenheden)*
€ 1.165,00
(excl. BTW)
€ 1.410,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 - 2000 | € 1,165 | € 1.165,00 |
| 3000 - 4000 | € 1,069 | € 1.069,00 |
| 5000 + | € 1,037 | € 1.037,00 |
*prijsindicatie
- RS-stocknr.:
- 265-5417
- Fabrikantnummer:
- R6013VNXC7G
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | R6013VNX | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series R6013VNX | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
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