ROHM RA1C030LD Type N-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin SMM1006 RA1C030LDT5CL
- RS-stocknr.:
- 265-5427
- Fabrikantnummer:
- RA1C030LDT5CL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,75
(excl. BTW)
€ 10,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending 19.925 stuk(s) vanaf 16 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 975 | € 0,35 | € 8,75 |
| 1000 - 1975 | € 0,223 | € 5,58 |
| 2000 - 4975 | € 0,216 | € 5,40 |
| 5000 - 9975 | € 0,211 | € 5,28 |
| 10000 + | € 0,206 | € 5,15 |
*prijsindicatie
- RS-stocknr.:
- 265-5427
- Fabrikantnummer:
- RA1C030LDT5CL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RA1C030LD | |
| Package Type | SMM1006 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | +7 to -0.2 V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RA1C030LD | ||
Package Type SMM1006 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs +7 to -0.2 V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The ROHM MOSFETs with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications. It is mounted on a cu board as well as it is halogen free.
Low on resistance
High power small package
Pb free lead plating
Halogen free
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