ROHM RA1C030LD Type N-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin SMM1006 RA1C030LDT5CL
- RS-stocknr.:
- 265-5427
- Fabrikantnummer:
- RA1C030LDT5CL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 8,10
(excl. BTW)
€ 9,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 19.925 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 975 | € 0,324 | € 8,10 |
| 1000 - 1975 | € 0,206 | € 5,15 |
| 2000 - 4975 | € 0,20 | € 5,00 |
| 5000 - 9975 | € 0,195 | € 4,88 |
| 10000 + | € 0,19 | € 4,75 |
*prijsindicatie
- RS-stocknr.:
- 265-5427
- Fabrikantnummer:
- RA1C030LDT5CL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RA1C030LD | |
| Package Type | SMM1006 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RA1C030LD | ||
Package Type SMM1006 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The ROHM MOSFETs with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications. It is mounted on a cu board as well as it is halogen free.
Low on resistance
High power small package
Pb free lead plating
Halogen free
Gerelateerde Links
- ROHM RA1C030LD Type N-Channel MOSFET 20 V Enhancement, 3-Pin SMM1006
- ROHM RD3P050SN Type N-Channel MOSFET Enhancement, 3-Pin TO-252 RD3P050SNTL1
- ROHM RQ5 Type N-Channel MOSFET 3-Pin TSMT-3 RQ5L045BGTCL
- ROHM RV7 Type N-Channel MOSFET 3-Pin DFN1212-3 RV7E040AJTCR1
- ROHM RQ5 Type N-Channel MOSFET 3-Pin TSMT-3 RQ5P035BGTCL
- ROHM RV7 Type N-Channel MOSFET 3-Pin DFN1212-3 RV7L020GNTCR1
- ROHM BSS Type N-Channel MOSFET 3-Pin SST-3 BSS670AHZGT116
- ROHM R60 Type N-Channel MOSFET 3-Pin SOT-223-3