Vishay SIDR N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- RS-stocknr.:
- 268-8285
- Fabrikantnummer:
- SIDR626EP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (2 eenheden, in een pakket van 2)*
€ 8,33
(excl. BTW)
€ 10,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 6 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 48 | € 4,165 | € 8,33 |
| 50 - 98 | € 3,73 | € 7,46 |
| 100 - 248 | € 3,055 | € 6,11 |
| 250 - 998 | € 2,995 | € 5,99 |
| 1000 + | € 2,39 | € 4,78 |
*prijsindicatie
- RS-stocknr.:
- 268-8285
- Fabrikantnummer:
- SIDR626EP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIDR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8DC | ||
Series SIDR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
Gerelateerde Links
- Vishay SIDR N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay SiD N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIDR626EP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR610EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR570EP-T1-RE3