Vishay SIDR Type N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3

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RS-stocknr.:
268-8284
Fabrikantnummer:
SIDR626EP-T1-RE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

227A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8DC

Series

SIDR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00174Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

102nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

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