Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- RS-stocknr.:
- 268-8335
- Fabrikantnummer:
- SIR5710DP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 8,52
(excl. BTW)
€ 10,31
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 6.020 stuk(s) vanaf 02 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,704 | € 8,52 |
| 50 - 95 | € 1,532 | € 7,66 |
| 100 - 245 | € 1,196 | € 5,98 |
| 250 - 995 | € 1,168 | € 5,84 |
| 1000 + | € 0,778 | € 3,89 |
*prijsindicatie
- RS-stocknr.:
- 268-8335
- Fabrikantnummer:
- SIR5710DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0315Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 56.8W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0315Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 56.8W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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