Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- RS-stocknr.:
- 268-8332
- Fabrikantnummer:
- SIR5708DP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.506,00
(excl. BTW)
€ 1.821,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,502 | € 1.506,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8332
- Fabrikantnummer:
- SIR5708DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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