Name: Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
Brand: Vishay
SKU: 268-8332
Price: 0.61 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.8A
	Maximum Drain Source Voltage Vds	150V
	Series	SiR
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	65.7W
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.8A
	Maximum Drain Source Voltage Vds 150V
	Series SiR
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 65.7W
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIR5708DP-T1-RE3

Land van herkomst:: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

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