Vishay SQ4850CEY Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SO-8 SQ4850CEY-T1_GE3
- RS-stocknr.:
- 268-8359
- Fabrikantnummer:
- SQ4850CEY-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,13
(excl. BTW)
€ 11,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 2.480 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,913 | € 9,13 |
| 50 - 90 | € 0,895 | € 8,95 |
| 100 - 240 | € 0,713 | € 7,13 |
| 250 - 990 | € 0,698 | € 6,98 |
| 1000 + | € 0,464 | € 4,64 |
*prijsindicatie
- RS-stocknr.:
- 268-8359
- Fabrikantnummer:
- SQ4850CEY-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ4850CEY | |
| Package Type | SO-8 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.031Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ4850CEY | ||
Package Type SO-8 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.031Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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