Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- RS-stocknr.:
- 188-5101
- Fabrikantnummer:
- SQJ208EP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,72
(excl. BTW)
€ 15,39
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,272 | € 12,72 |
| 100 - 240 | € 1,207 | € 12,07 |
| 250 - 490 | € 1,018 | € 10,18 |
| 500 - 990 | € 0,827 | € 8,27 |
| 1000 + | € 0,70 | € 7,00 |
*prijsindicatie
- RS-stocknr.:
- 188-5101
- Fabrikantnummer:
- SQJ208EP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.
TrenchFET® power MOSFET
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