Vishay SQS Type N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- RS-stocknr.:
- 268-8369
- Fabrikantnummer:
- SQS140ELNW-T1_GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.716,00
(excl. BTW)
€ 2.076,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,572 | € 1.716,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8369
- Fabrikantnummer:
- SQS140ELNW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8SLW | |
| Series | SQS | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 197W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8SLW | ||
Series SQS | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 197W | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. It has wettable flank terminals.
Low thermal resistance
AEC Q101 qualified
ROHS compliant
Gerelateerde Links
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay N-Channel MOSFET 40 V PowerPAK 1212-8SLW SQS140ENW-T1_GE3
- Vishay N-Channel MOSFET 60 V PowerPAK 1212-8SLW SQS160ELNW-T1_GE3
- Vishay N-Channel MOSFET 40 V PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay N-Channel MOSFET 40 V PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay Silicon P-Channel MOSFET 80 V, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3
- Vishay Silicon N-Channel MOSFET 30 V, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
