Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3
- RS-stocknr.:
- 273-2998
- Fabrikantnummer:
- IPB057N06NATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,21
(excl. BTW)
€ 7,515
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 950 stuk(s) vanaf 22 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,242 | € 6,21 |
| 50 - 95 | € 1,154 | € 5,77 |
| 100 - 245 | € 1,018 | € 5,09 |
| 250 - 495 | € 0,982 | € 4,91 |
| 500 + | € 0,866 | € 4,33 |
*prijsindicatie
- RS-stocknr.:
- 273-2998
- Fabrikantnummer:
- IPB057N06NATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO263-3 | |
| Series | IPB057N06N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -5°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Length | 40mm | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO263-3 | ||
Series IPB057N06N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -5°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Length 40mm | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
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