Infineon OptiMOSa5 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 3-Pin PG-TO220-3
- RS-stocknr.:
- 273-3018
- Fabrikantnummer:
- IPP039N10N5AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,34
(excl. BTW)
€ 8,88
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 390 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,67 | € 7,34 |
| 10 - 18 | € 3,34 | € 6,68 |
| 20 - 24 | € 3,275 | € 6,55 |
| 26 - 48 | € 3,06 | € 6,12 |
| 50 + | € 2,82 | € 5,64 |
*prijsindicatie
- RS-stocknr.:
- 273-3018
- Fabrikantnummer:
- IPP039N10N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO220-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO220-3 | ||
Series OptiMOSa5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Automotive Standard No | ||
The Infineon power MOSFET in a TO-220 package ideal for high frequency switching and synchronous rectification applications.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required