Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3
- RS-stocknr.:
- 273-3022
- Fabrikantnummer:
- IPP65R190CFD7AAKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 4,97
(excl. BTW)
€ 6,014
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,485 | € 4,97 |
| 10 - 18 | € 2,26 | € 4,52 |
| 20 - 24 | € 2,21 | € 4,42 |
| 26 - 48 | € 2,065 | € 4,13 |
| 50 + | € 1,915 | € 3,83 |
*prijsindicatie
- RS-stocknr.:
- 273-3022
- Fabrikantnummer:
- IPP65R190CFD7AAKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPP65R190CFD7A | |
| Package Type | PG-TO220-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 77W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPP65R190CFD7A | ||
Package Type PG-TO220-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 77W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N channel automotive SJ power MOSFET. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
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