Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- RS-stocknr.:
- 273-3024
- Fabrikantnummer:
- IPU95R750P7AKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,30
(excl. BTW)
€ 10,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.490 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,66 | € 8,30 |
| 10 - 20 | € 1,508 | € 7,54 |
| 25 - 45 | € 1,384 | € 6,92 |
| 50 - 95 | € 1,282 | € 6,41 |
| 100 + | € 1,184 | € 5,92 |
*prijsindicatie
- RS-stocknr.:
- 273-3024
- Fabrikantnummer:
- IPU95R750P7AKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO251-3 | |
| Series | IPU | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 73W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO251-3 | ||
Series IPU | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 73W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns