Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- RS-stocknr.:
- 273-3024
- Fabrikantnummer:
- IPU95R750P7AKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,34
(excl. BTW)
€ 10,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.490 stuk(s) vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,668 | € 8,34 |
| 10 - 20 | € 1,514 | € 7,57 |
| 25 - 45 | € 1,39 | € 6,95 |
| 50 - 95 | € 1,286 | € 6,43 |
| 100 + | € 1,19 | € 5,95 |
*prijsindicatie
- RS-stocknr.:
- 273-3024
- Fabrikantnummer:
- IPU95R750P7AKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPU | |
| Package Type | PG-TO251-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 73W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPU | ||
Package Type PG-TO251-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 73W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
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