Infineon OptiMOS N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1

RS-stocknr.:: 273-2786
Fabrikantnummer:: IPD95R1K2P7ATMA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1

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50 - 95	€ 1,742	€ 8,71
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250 - 995	€ 1,476	€ 7,38
1000 +	€ 1,368	€ 6,84

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RS-stocknr.:: 273-2786
Fabrikantnummer:: IPD95R1K2P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	950V
	Package Type	PG-TO252-3
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 950V
	Package Type PG-TO252-3
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD95R1K2P7ATMA1

Infineon OptiMOS Series MOSFET, 52W Power Dissipation, 950V Drain-Source Voltage - IPD95R1K2P7ATMA1

This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding temperature ranges. It operates as an enhancement-mode device suitable for applications that require a balance of voltage withstand capability and moderate continuous current. The component is supplied in a PG-TO252-3 package and conforms to RoHS environmental restrictions.

Features and Benefits:

• 950V drain-source capability allowing high-voltage switching
• 6A continuous drain current supporting medium-power loads
• 52W power dissipation for thermal handling in converters
• 1.2Ω RDS(on) minimising conduction losses at low frequencies
• 15nC typical gate charge enabling controlled switching transitions

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for low-frequency switching in industrial supplies
• Used with surface-mount boards requiring Compact power devices
• Can be used for systems operating from -55°C to 150°C
• Used for discrete switching stages in power management

What gate voltage limits must be observed for correct operation?

The gate must not exceed ±20V relative to the source to prevent electrical overstress.

How does the device perform across temperature extremes?

It maintains specified operation from -55°C up to 150°C, enabling a wide thermal margin for harsh environments.

What package and mounting method does it use?

It is supplied in a PG-TO252-3 package intended for surface mounting to provide Compact PCB integration.

Is this component suitable for automotive standard compliance?

It is not specified as meeting automotive-grade standards and should not be assumed to be compliant.