Infineon OptiMOS Type P-Channel MOSFET, 14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS-stocknr.:
- 273-5244
- Fabrikantnummer:
- BSO301SPHXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,94
(excl. BTW)
€ 8,395
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 75 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,388 | € 6,94 |
| 50 - 95 | € 1,156 | € 5,78 |
| 100 - 245 | € 1,07 | € 5,35 |
| 250 - 995 | € 0,99 | € 4,95 |
| 1000 + | € 0,972 | € 4,86 |
*prijsindicatie
- RS-stocknr.:
- 273-5244
- Fabrikantnummer:
- BSO301SPHXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | OptiMOS | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series OptiMOS | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
Gerelateerde Links
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 30 V, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon OptiMOS P P-Channel MOSFET 20 V, 8-Pin SOIC BSO201SPHXUMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 8-Pin DSO BSO200P03SHXUMA1
- Infineon 1EDB7275FXUMA1 MOSFET Gate Driver 5V 8-Pin, PG-DSO-8