Infineon OptiMOS Type P-Channel MOSFET, 14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- RS-stocknr.:
- 273-5243
- Fabrikantnummer:
- BSO301SPHXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 2.217,50
(excl. BTW)
€ 2.682,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,887 | € 2.217,50 |
*prijsindicatie
- RS-stocknr.:
- 273-5243
- Fabrikantnummer:
- BSO301SPHXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | OptiMOS | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series OptiMOS | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
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