Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220 IPAN60R180P7SXKSA1

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€ 53,35

(excl. BTW)

€ 64,55

(incl. BTW)

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  • Plus verzending 400 stuk(s) vanaf 29 december 2025
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50 - 50€ 1,067€ 53,35
100 +€ 0,846€ 42,30

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RS-stocknr.:
273-7458
Fabrikantnummer:
IPAN60R180P7SXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO-220

Series

CoolMOSTM P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.18Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

26W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET of Cool MOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V Cool MOS P7 series is the successor to the Cool MOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, example very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses makes witching applications even more efficient, more compact and much cooler.

Ease of use

Excellent ESD robustness

Simplified thermal management

Significant reduction of switching

Suitable for hard and soft switching

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