Infineon OptiMOS-TM3 Type N-Channel MOSFET, 80 A, 100 V N, 3-Pin PG-TO-220
- RS-stocknr.:
- 273-7467
- Fabrikantnummer:
- IPP086N10N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 3,07
(excl. BTW)
€ 3,714
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 470 stuk(s) vanaf 03 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 1,535 | € 3,07 |
| 10 - 18 | € 1,38 | € 2,76 |
| 20 - 98 | € 1,36 | € 2,72 |
| 100 - 248 | € 1,11 | € 2,22 |
| 250 + | € 0,985 | € 1,97 |
*prijsindicatie
- RS-stocknr.:
- 273-7467
- Fabrikantnummer:
- IPP086N10N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO-220 | |
| Series | OptiMOS-TM3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO-220 | ||
Series OptiMOS-TM3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is qualified according to JEDEC1 for target application. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
Gerelateerde Links
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V N, 3-Pin PG-TO-220 IPP086N10N3GXKSA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V N, 8-Pin PG-TDSON-8 BSZ440N10NS3GATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1