Infineon IPW MOSFET, 13 A, 650 V, 3-Pin PG-TO-247
- RS-stocknr.:
- 273-7473
- Fabrikantnummer:
- IPW60R105CFD7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 4,72
(excl. BTW)
€ 5,71
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 240 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 4,72 |
| 5 - 9 | € 4,63 |
| 10 - 99 | € 4,27 |
| 100 - 249 | € 3,92 |
| 250 + | € 3,62 |
*prijsindicatie
- RS-stocknr.:
- 273-7473
- Fabrikantnummer:
- IPW60R105CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 106W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 106W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon MOSFET has highest efficiency with outstanding ease of use. This MOSFET has an excellent hard commutation ruggedness and highest reliability for resonant topologies. It is suitable for soft switching topologies.
Low gate charge
Ultra fast body diode
Best in class reverse recovery charge
Enabling increased power density solution
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