STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS-stocknr.:
- 275-1356
- Fabrikantnummer:
- STP80N600K6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,26
(excl. BTW)
€ 6,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 60 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,63 | € 5,26 |
| 10 - 18 | € 2,36 | € 4,72 |
| 20 + | € 2,32 | € 4,64 |
*prijsindicatie
- RS-stocknr.:
- 275-1356
- Fabrikantnummer:
- STP80N600K6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 86W | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 86W | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 28.9mm | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
Gerelateerde Links
- STMicroelectronics Quad GaN N-Channel MOSFET 7 A, 3-Pin TO-220 STP80N600K6
- STMicroelectronics MASTERG GaN N/P-Channel MOSFET, 31-Pin QFN 9 MASTERGAN1LTR
- STMicroelectronics GaN N-Channel MOSFET Transistor 750 V, 4-Pin PowerFLAT 5x6 HV SGT65R65AL
- STMicroelectronics MDmesh 7 A 3-Pin TO-220 STP9NK60Z
- STMicroelectronics Dual GaN MOSFET Transistor 750 V, 4-Pin Reel SGT120R65AL
- STMicroelectronics N-Channel MOSFET 3-Pin TO-220 STP80N450K6
- STMicroelectronics N-Channel MOSFET 3-Pin TO-220 STP6N95K5
- STMicroelectronics N-Channel MOSFET Transistor 3-Pin TO-220 STP26N65DM2
