Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3

RS-stocknr.:: 279-9907
Fabrikantnummer:: SIHF074N65E-GE3
Fabrikant:: Vishay

Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3

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RS-stocknr.:: 279-9907
Fabrikantnummer:: SIHF074N65E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.079Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	39W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Series SIHF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.079Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 39W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.1mm
	Automotive Standard No

Datasheet - SIHF074N65E-GE3

Vishay SIHF Series MOSFET, 650V Drain Source Voltage, 14A Continuous Drain Current - SIHF074N65E-GE3

This MOSFET is a high-voltage switching transistor designed for power conversion and control in industrial electronics. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical choice for repairable assemblies and prototyping where robust voltage handling and straightforward mounting are needed.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching applications • 14A continuous drain current supports sustained load handling • 0.079Ω Rds(on) reduces conduction losses under load • 8nC typical gate charge gives predictable switching behaviour • 30V maximum gate-source rating allows wide gate drive margins • 39W power dissipation capability manages thermal stress during operation

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive front ends • Used for power-factor-correction stages in converters • Can be used for inverter and welding power electronics • Suitable for laboratory prototyping and through-hole repairs

What temperature range can it withstand during operation?

It is specified to operate down to -55°C and up to 150°C maximum junction temperature for high-temperature environments.

How many mounting pins and what package does it use?

It is supplied in a TO-220 through-hole package with three pins for straightforward PCB or heatsink attachment.

What typical dynamic characteristic affects switching losses?

The typical gate charge is 8nC at the rated gate drive, which influences switching transition energy and driver sizing.

Is it suitable for automotive qualifying processes?

It is not designated as an automotive-standard part and therefore should not be used where automotive-grade certification is required.