Vishay E Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 228-2853
- Fabrikantnummer:
- SiHF080N60E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 124,20
(excl. BTW)
€ 150,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 900 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 2,484 | € 124,20 |
| 100 - 200 | € 2,335 | € 116,75 |
| 250 + | € 2,112 | € 105,60 |
*prijsindicatie
- RS-stocknr.:
- 228-2853
- Fabrikantnummer:
- SiHF080N60E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Gerelateerde Links
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3
- Vishay SIHF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3