Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

RS-stocknr.:: 279-9927
Fabrikantnummer:: SIHP155N60EF-GE3
Fabrikant:: Vishay

Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

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RS-stocknr.:: 279-9927
Fabrikantnummer:: SIHP155N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220AB
	Series	SIHP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.157Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	38nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220AB
	Series SIHP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.157Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 38nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP155N60EF-GE3

Vishay SIHP Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHP155N60EF-GE3

This MOSFET is a through-hole N-channel transistor designed for high-voltage switching and power applications. It operates across an extended temperature range and is supplied in a TO-220AB package suitable for conventional heatsinking and panel mounting. The device is intended for engineers requiring a robust semiconductor for discrete power stages and switching topologies where a combination of voltage capability and thermal endurance is needed.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages

Applications

• Suitable for mains and high-voltage inverter switches
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics

What ambient temperatures can the device withstand in operation?

It is specified to operate between -55 °C and 150 °C, enabling use in harsh thermal environments.

How is the package useful for thermal management?

The TO-220AB format provides a metal tab for direct attachment to heatsinks, improving heat transfer for high dissipation.

What gate-drive constraints should be observed?

The maximum gate-to-source voltage is 30V, so gate drivers should be limited to this value to avoid overstress.

Is the device compliant with common material restrictions?

It meets RoHS requirements, restricting certain hazardous substances in its construction.