Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

RS-stocknr.:: 279-9927
Fabrikantnummer:: SIHP155N60EF-GE3
Fabrikant:: Vishay

Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

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RS-stocknr.:: 279-9927
Fabrikantnummer:: SIHP155N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220AB
	Series	SIHP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.157Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	38nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220AB
	Series SIHP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.157Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 38nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP155N60EF-GE3

Vishay SIHP Series MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHP155N60EF-GE3

This MOSFET is a high-voltage, N-channel transistor designed for power switching in industrial and electronic control environments. It operates as an enhancement-mode device in a through-hole TO-220 package, providing robust power handling for applications requiring substantial drain-source voltage and thermal endurance.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching capability
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies

What gate drive considerations are required for reliable switching?

The gate tolerance is ±30V maximum, so gate drivers should respect this limit and provide sufficient drive current to charge the 38 nC typical gate charge for controlled switching speeds.

How should thermal management be arranged for continuous operation?

With 179W maximum power dissipation and TO-220 mounting, secure the device to an appropriate heatsink and ensure adequate airflow to maintain junction temperatures within the -55 °C to 150 °C operating range.

What electrical limits must be observed during design?

The transistor must not be subjected to drain-source voltages above 600V or continuous drain currents above 21 A to avoid exceeding device ratings.

Which package and mounting style does the device use for PCB or chassis integration?

It is supplied in a through-hole TO-220AB package with three pins, allowing secure chassis mounting and straightforward replacement in legacy designs.