Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3

RS-stocknr.:: 279-9911
Fabrikantnummer:: SIHG155N60EF-GE3
Fabrikant:: Vishay

Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 25 eenheden)*

€ 72,925

(excl. BTW)

€ 88,25

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 450 stuk(s) vanaf 24 juni 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 75	€ 2,917	€ 72,93
100 +	€ 2,593	€ 64,83

*prijsindicatie

RS-stocknr.:: 279-9911
Fabrikantnummer:: SIHG155N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247AC
	Series	SIHG
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	38nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	15.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247AC
	Series SIHG
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 38nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 15.7mm
	Automotive Standard No

Datasheet - SIHG155N60EF-GE3

Vishay SIHG Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHG155N60EF-GE3

This n-channel MOSFET is a high-voltage switching transistor designed for power conversion and control tasks in industrial and electronic systems. It is intended for use in through-hole mounting on power assemblies where robust avalanche and thermal handling are required. The device operates across a wide temperature span and is suitable for applications demanding substantial power throughput and gate-drive flexibility.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 21A continuous drain current supports sustained load operation • 0.159Ω Rds(on) reduces conduction losses during on-state • 179W power dissipation allows higher thermal loading capacity • 38nC gate charge facilitates predictable switching behaviour • 30V gate tolerance permits generous drive margin for gate circuits

Applications

• Suitable for high-voltage DC-DC converters in power supplies • Ideal for industrial motor drive switching stages • Used for switch-mode power supplies in automation equipment • Can be used for valve or solenoid drive circuits requiring through-hole components • Used with discrete power stages in laboratory and test rigs

What mounting considerations are needed for heat management?

Use a suitably rated heatsink attached to the package mounting face and ensure airflow or thermal Interface material to maintain junction temperatures within safe limits.

How does the device behave under elevated ambient temperatures?

It is specified for operation across a wide temperature range and will require derating of allowable current and power dissipation as junction temperature approaches its maximum rated limit.

What gate-drive arrangement is appropriate for fast switching?

A gate driver capable of sourcing and sinking currents to achieve the specified gate charge transition times is recommended, while respecting the 30V gate-source limit.

Are there considerations for switching losses at high frequency?

Switching losses scale with frequency and gate-charge-induced transition energy, so minimise transition durations and manage thermal dissipation when operating at elevated switching rates.