Vishay Single EF 1 Type N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
- RS-stocknr.:
- 180-7768
- Fabrikantnummer:
- SIHP21N60EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,98
(excl. BTW)
€ 12,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,99 | € 9,98 |
| 20 - 48 | € 4,505 | € 9,01 |
| 50 - 98 | € 4,235 | € 8,47 |
| 100 - 198 | € 3,995 | € 7,99 |
| 200 + | € 3,89 | € 7,78 |
*prijsindicatie
- RS-stocknr.:
- 180-7768
- Fabrikantnummer:
- SIHP21N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | EF | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.176Ω | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.4mm | |
| Height | 6.71mm | |
| Standards/Approvals | No | |
| Width | 10.52 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series EF | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.176Ω | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 14.4mm | ||
Height 6.71mm | ||
Standards/Approvals No | ||
Width 10.52 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay SIHP21N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-220AB package. It is offers drain to source resistance (RDS.) of 0.176ohms at 10VGS. Maximum drain current 21A.
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM
Low figure-of-merit (FOM): Ron x Qg
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