Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- RS-stocknr.:
- 279-9935
- Fabrikantnummer:
- SIJ4819DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.919,00
(excl. BTW)
€ 3.531,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,973 | € 2.919,00 |
*prijsindicatie
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (in een pakket van 4)
€ 12,61
(excl. BTW)
€ 15,26
(incl. BTW)
- RS-stocknr.:
- 279-9935
- Fabrikantnummer:
- SIJ4819DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8L | |
| Series | SIJ | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0207Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 73.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8L | ||
Series SIJ | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0207Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 73.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device
Gerelateerde Links
- Vishay SIJ Type P-Channel MOSFET 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- Vishay SIJ N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3
- Vishay SIJ N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3
- Vishay SiJA N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay N-Channel MOSFET 80 V PowerPAK SO-8L SIJ482DP-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Vishay SiRA99DP Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA99DP-T1-GE3