Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3

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€ 8,58

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€ 10,38

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5 - 45€ 1,716€ 8,58
50 - 245€ 1,616€ 8,08
250 - 495€ 1,456€ 7,28
500 - 1245€ 1,376€ 6,88
1250 +€ 1,288€ 6,44

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Verpakkingsopties
RS-stocknr.:
252-0244
Fabrikantnummer:
SI4151DY-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

58nC

Maximum Power Dissipation Pd

5.6W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

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