Vishay IRFZ48R Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS-stocknr.:
- 281-6036
- Artikelnummer Distrelec:
- 304-42-108
- Fabrikantnummer:
- IRFZ48RPBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 16,98
(excl. BTW)
€ 20,545
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.025 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,396 | € 16,98 |
| 50 - 95 | € 2,972 | € 14,86 |
| 100 - 245 | € 2,652 | € 13,26 |
| 250 - 495 | € 2,50 | € 12,50 |
| 500 + | € 2,33 | € 11,65 |
*prijsindicatie
- RS-stocknr.:
- 281-6036
- Artikelnummer Distrelec:
- 304-42-108
- Fabrikantnummer:
- IRFZ48RPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | IRFZ48R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series IRFZ48R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay power MOSFET utilizes advanced processing techniques to achieve low on-resistance per silicon area. It is an efficient and reliable device for various applications due to their fast switching speed and ruggedized design.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
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