Infineon SIPMOS N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1

RS-stocknr.:: 445-2269
Fabrikantnummer:: BSP295H6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 6,53

(excl. BTW)

€ 7,90

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

115 stuk(s) klaar voor verzending
595 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 2.000 stuk(s) vanaf 06 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 1,306	€ 6,53
50 - 120	€ 1,176	€ 5,88
125 +	€ 1,088	€ 5,44

*prijsindicatie

RS-stocknr.:: 445-2269
Fabrikantnummer:: BSP295H6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Standards/Approvals	No
	Width	3.5mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Standards/Approvals No
	Width 3.5mm
	Height 1.6mm
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1

This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.

Features & Benefits

• Continuously handles a drain current of 1.8A

• Low maximum drain-source resistance of 300mΩ

• Wide gate-source voltage range from -20V to +20V

• Qualified to AEC-Q101 automotive standard for reliability

Applications

• Power management systems for efficient output control

• Motor drives for reliable switching operations

• Signal amplification in various electronic devices

• Automotive electronic control units

What is the typical power dissipation of the component?

It can dissipate up to 1.8W under specified conditions for effective heat management during operation.

How does the gate threshold voltage affect performance?

The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.

Can this component handle pulsed drain currents?

Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.

What packaging options are available?

The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.

Is the device compliant with environmental standards?

It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.