Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF

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Verpakkingsopties
RS-stocknr.:
542-9406
Artikelnummer Distrelec:
171-15-868
Fabrikantnummer:
IRF740SPBF
Fabrikant:
Vishay
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Merk

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

400V

Package Type

TO-263

Series

IRF740S

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

550mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

4.83mm

Length

10.67mm

Standards/Approvals

RoHS

Width

9.65mm

Automotive Standard

No

Vishay IRF740S Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740SPBF


This power MOSFET is a high-voltage, N-channel enhancement device designed for surface-mount applications in industrial electronic systems. It functions as a switching transistor capable of handling substantial voltage and current in demanding environments, suitable for use where compact, board-mounted power switching is required.

Features and Benefits:


• 400V drain rating enables high-voltage switching applications • 10A continuous current supports moderate power loads • 125W power dissipation allows sustained thermal handling • 550mΩ Rds(on) reduces conduction losses in low-to-mid power circuits • 63nC typical gate charge yields predictable drive requirements • 150°C maximum operating temperature suits high-temperature environments

Applications


• Suitable for industrial motor drive switching stages • Ideal for high-voltage power converters and inverters • Used for auxiliary power supplies in automation equipment • Can be used for solid-state relay and switch modules • Used with surface-mount assemblies requiring TO-263 mounting

What mounting style does it require on a PCB?


It is supplied in a TO-263 surface-mount package with three pins designed for board-level soldering and thermal conduction to a PCB copper area.

What gate voltage limits must designers observe?


Gate-to-source voltage must not exceed 20V to avoid gate oxide stress and potential device failure.

How should thermal management be approached in designs?


Designers should use adequate copper area or heatsinking on the PCB to dissipate up to 125W under specified conditions and maintain junction temperatures below the 150°C limit.

What environmental temperature range can it tolerate during operation?


The device is rated to operate down to -55°C and up to 150°C, permitting use across a wide range of ambient temperatures.

What characteristic affects switching drive sizing?


The typical gate charge of 63nC determines the drive current and transition times required from the gate driver to achieve the desired switching speed.

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