Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 542-9490
Fabrikantnummer:: IRFBC20PBF
Fabrikant:: Vishay

Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB

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RS-stocknr.:: 542-9490
Fabrikantnummer:: IRFBC20PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.2A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220AB
	Series	IRFBC20
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	50W
	Forward Voltage Vf	2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Height	9.01mm
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.2A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220AB
	Series IRFBC20
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 50W
	Forward Voltage Vf 2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Height 9.01mm
	Length 10.41mm
	Automotive Standard No

Vishay IRFBC20 Series Power MOSFET, 600V Maximum Drain Source Voltage, 2.2A Maximum Continuous Drain Current - IRFBC20PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control tasks in industrial and electronic systems. It is supplied in a through-hole TO-220AB package and is intended for applications requiring elevated voltage tolerance and robust thermal endurance in conventional board-mounted assemblies.

Features and Benefits:

• 600V drain-to-source rating enables high-voltage switching applications • 2.2A continuous current capacity supports moderate load drivers • 4.4Ω Rds(on) simplifies gate-drive design for low-frequency control • 50W power dissipation allows sustained power handling under cooling • 18nC typical gate charge reduces switching energy at modest speeds • 150°C maximum junction temperature tolerates elevated thermal stress

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive control stages • Used for load switching in automation equipment • Can be used for gate-controlled power regulation in test rigs • Suitable for replacement in legacy through-hole high-voltage circuits

What gate voltage range is acceptable for operation?

The device permits gate excursions up to 20V relative to source for normal operation.

How does the package support assembly and handling?

The TO-220AB through-hole format provides three-pin mounting and easy heatsink attachment for mechanical stability and thermal management.

What environmental temperature limits apply during use?

It operates across a temperature span down to -55°C and up to a maximum of 150°C junction temperature.

What is the typical switching charge to consider for drive circuitry?

Expect an approximate total gate charge of 18nC at typical drive conditions when sizing driver capability.

Are there recognised material or manufacturing restrictions on the part?

The component conforms to RoHS material restrictions as part of its manufacturing approvals.