Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF

RS-stocknr.:: 542-9490
Fabrikantnummer:: IRFBC20PBF
Fabrikant:: Vishay

Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF

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RS-stocknr.:: 542-9490
Fabrikantnummer:: IRFBC20PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.2A
	Maximum Drain Source Voltage Vds	600V
	Series	IRFBC20
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	50W
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	10.41mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.2A
	Maximum Drain Source Voltage Vds 600V
	Series IRFBC20
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 50W
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 10.41mm
	Width 4.7mm
	Standards/Approvals RoHS
	Height 9.01mm
	Automotive Standard No

Vishay IRFBC20 Series Power MOSFET, 600V Maximum Drain Source Voltage, 50W Maximum Power Dissipation - IRFBC20PBF

This power MOSFET is a high-voltage N-channel switching transistor designed for use in power conversion and control circuits. It operates as an enhancement-mode device suitable for switching and amplification tasks across a wide industrial temperature span, and is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sinking integration.

Features and Benefits:

• 600V drain-to-source withstand allows high-voltage switching
• 2.2A continuous drain current supports moderate load currents
• 4.4Ω low Rds(on) reduces conduction losses where currents are limited
• 50W maximum power dissipation enables sustained thermal loading
• 18nC typical gate charge allows predictable switching behaviour
• 20V gate rating permits common gate-drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power controllers in industrial equipment
• Used with discrete driver stages in motor-control interfaces
• Can be used for snubber and clamp functions in power systems
• Suitable for laboratory prototyping using through-hole mounting

What ambient temperatures can it withstand in operation?

It can operate across an industrial range from -55°C up to 150°C allowing use in harsh thermal environments.

How should it be mounted for effective heat dissipation?

The TO-220AB through-hole format is compatible with standard heatsinks and PCB-mounting with screw attachment for improved thermal transfer.

What gate-drive limits must be observed?

The maximum gate-to-source voltage is 20V, so gate-drive circuitry should be constrained to that level to avoid damaging the gate oxide.

Is it suitable for automotive-grade applications?

It is not specified to meet automotive standards and should therefore be avoided where automotive approvals are mandatory.