Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247 IRFP9140NPBF

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 2,45

(excl. BTW)

€ 2,96

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Bestellingen onder € 75,00 (excl. BTW) € 5,95.
Op voorraad
  • 188 stuk(s) klaar voor verzending vanaf een andere locatie
  • Plus verzending 35 stuk(s) vanaf 20 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 9€ 2,45
10 - 49€ 2,34
50 - 99€ 2,28
100 - 249€ 2,12
250 +€ 1,97

*prijsindicatie

RS-stocknr.:
542-9816
Artikelnummer Distrelec:
302-84-056
Fabrikantnummer:
IRFP9140NPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

117mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.3V

Typical Gate Charge Qg @ Vgs

97nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

175°C

Height

20.3mm

Length

15.9mm

Width

5.3 mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF


This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.

Features & Benefits


• P-Channel configuration allows for flexible circuit designs

• Maximum continuous drain current of 23A

• 100V drain-source voltage rating enhances safety

• Low RDS(on) of 117mΩ reduces power loss

• Suitable for enhancement mode applications ensuring stable performance

Applications


• Utilised in motor control for improved efficiency

• Ideal for energy management systems that require high reliability

• Common in power supply circuits for robust operation

• Employed in switching regulators for effective power conversion

• Suitable for industrial automation systems requiring dependable switching

What is the maximum gate threshold voltage for the device?


It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.

How does the RDS(on) value impact performance?


The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.

What types of circuits can benefit from this MOSFET?


It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.

What is the typical gate charge required for operation?


The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.

What are the implications of the maximum operating temperature?


With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.

Gerelateerde Links