Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
919-4886
Fabrikantnummer:
IRF9540NPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

117mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

97nC

Maximum Power Dissipation Pd

140W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.69 mm

Length

10.54mm

Height

8.77mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF


This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits


• Handles up to 23A continuous drain current for robust performance

• Maximum drain-source voltage of 100V for consistent operation

• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency

• Capable of power dissipation up to 140W for intensive applications

• Typical gate charge of 97 nC at 10V supports fast switching

Applications


• Employed in power management circuits for efficient energy conversion

• Used in motor control systems for accurate speed regulation

• Integrated into power supply circuits to improve operational reliability

• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?


The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?


The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?


This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?


Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.

What is the significance of the low drain-source resistance?


A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.

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