Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4886
Fabrikantnummer:: IRF9540NPBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 44,80

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€ 54,20

(incl. BTW)

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Plus verzending 350 stuk(s) vanaf 02 november 2026
Plus verzending 400 stuk(s) vanaf 09 november 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,896	€ 44,80
100 - 200	€ 0,663	€ 33,15
250 - 450	€ 0,628	€ 31,40
500 - 950	€ 0,583	€ 29,15
1000 +	€ 0,538	€ 26,90

*prijsindicatie

RS-stocknr.:: 919-4886
Fabrikantnummer:: IRF9540NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	117mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	97nC
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Width	4.69mm
	Standards/Approvals	No
	Height	8.77mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 117mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 97nC
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Width 4.69mm
	Standards/Approvals No
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF

This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits

• Handles up to 23A continuous drain current for robust performance

• Maximum drain-source voltage of 100V for consistent operation

• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency

• Capable of power dissipation up to 140W for intensive applications

• Typical gate charge of 97 nC at 10V supports fast switching

Applications

• Employed in power management circuits for efficient energy conversion

• Used in motor control systems for accurate speed regulation

• Integrated into power supply circuits to improve operational reliability

• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?

The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?

This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?

Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.

What is the significance of the low drain-source resistance?

A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.