Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 919-5028
Fabrikantnummer:: IRFP9140NPBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247

Bulkkorting beschikbaar

Subtotaal (1 tube van 25 eenheden)*

€ 39,80

(excl. BTW)

€ 48,15

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 400 stuk(s) vanaf 29 december 2025
Plus verzending 25 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 1,592	€ 39,80
50 - 100	€ 1,512	€ 37,80
125 - 225	€ 1,448	€ 36,20
250 - 600	€ 1,385	€ 34,63
625 +	€ 1,289	€ 32,23

*prijsindicatie

RS-stocknr.:: 919-5028
Fabrikantnummer:: IRFP9140NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	117mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	97nC
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	5.3 mm
	Standards/Approvals	No
	Length	15.9mm
	Height	20.3mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 117mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 97nC
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 5.3 mm
	Standards/Approvals No
	Length 15.9mm
	Height 20.3mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF

This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.

Features & Benefits

• P-Channel configuration allows for flexible circuit designs

• Maximum continuous drain current of 23A

• 100V drain-source voltage rating enhances safety

• Low RDS(on) of 117mΩ reduces power loss

• Suitable for enhancement mode applications ensuring stable performance

Applications

• Utilised in motor control for improved efficiency

• Ideal for energy management systems that require high reliability

• Common in power supply circuits for robust operation

• Employed in switching regulators for effective power conversion

• Suitable for industrial automation systems requiring dependable switching

What is the maximum gate threshold voltage for the device?

It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.

How does the RDS(on) value impact performance?

The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.

What types of circuits can benefit from this MOSFET?

It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.

What is the typical gate charge required for operation?

The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.

What are the implications of the maximum operating temperature?

With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.