Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK
- RS-stocknr.:
- 650-3707
- Fabrikantnummer:
- IRF5210LPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,46
(excl. BTW)
€ 5,395
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 5 stuk(s) vanaf 04 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 0,892 | € 4,46 |
*prijsindicatie
- RS-stocknr.:
- 650-3707
- Fabrikantnummer:
- IRF5210LPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.54mm | |
| Standards/Approvals | Lead-Free | |
| Width | 4.69mm | |
| Height | 10.54mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.54mm | ||
Standards/Approvals Lead-Free | ||
Width 4.69mm | ||
Height 10.54mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin I2PAK IRF5210LPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon Single HEXFET 1 Type N-Channel MOSFET 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin I2PAK IRF2804LPBF
- Infineon HEXFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC