Fairchild UltraFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC FDS3692
- RS-stocknr.:
- 671-0501
- Fabrikantnummer:
- FDS3692
- Fabrikant:
- Fairchild Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,13
(excl. BTW)
€ 4,995
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 0,826 | € 4,13 |
| 25 - 95 | € 0,69 | € 3,45 |
| 100 - 245 | € 0,532 | € 2,66 |
| 250 - 495 | € 0,498 | € 2,49 |
| 500 + | € 0,468 | € 2,34 |
*prijsindicatie
- RS-stocknr.:
- 671-0501
- Fabrikantnummer:
- FDS3692
- Fabrikant:
- Fairchild Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOIC | |
| Series | UltraFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 5mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOIC | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 5mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
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