N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Fairchild IRF530A
- RS-stocknr.:
- 671-5367
- Fabrikantnummer:
- IRF530A
- Fabrikant:
- Fairchild Semiconductor
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 671-5367
- Fabrikantnummer:
- IRF530A
- Fabrikant:
- Fairchild Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Length | 10.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
| Alles selecteren | ||
|---|---|---|
Merk Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Length 10.1mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- Fairchild PowerTrench N-Channel MOSFET 60 V, 3-Pin TO-220AB FDP038AN06A0
- Fairchild UniFET N-Channel MOSFET 200 V, 3-Pin TO-220AB FDP52N20
- Vishay N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF530PBF
- Fairchild UltraFET N-Channel MOSFET 100 V, 8-Pin SOIC FDS3692
- Fairchild UltraFET N-Channel MOSFET 100 V, 3-Pin TO-247 HUF75639G3
- Vishay N-Channel MOSFET 100 V TO-220AB IRF520PBF
- Vishay N-Channel MOSFET 250 V, 3-Pin TO-220AB IRF644PBF
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRFB13N50APBF