Fairchild UltraFET N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-247 HUF75639G3
- RS-stocknr.:
- 807-6692
- Fabrikantnummer:
- HUF75639G3
- Fabrikant:
- Fairchild Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,72
(excl. BTW)
€ 5,72
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,36 | € 4,72 |
| 10 - 18 | € 1,90 | € 3,80 |
| 20 - 98 | € 1,74 | € 3,48 |
| 100 - 198 | € 1,45 | € 2,90 |
| 200 + | € 1,415 | € 2,83 |
*prijsindicatie
- RS-stocknr.:
- 807-6692
- Fabrikantnummer:
- HUF75639G3
- Fabrikant:
- Fairchild Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-247 | |
| Series | UltraFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 110 nC @ 20 V | |
| Length | 15.87mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
| Alles selecteren | ||
|---|---|---|
Merk Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-247 | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.82mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 110 nC @ 20 V | ||
Length 15.87mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
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