onsemi QFET N-Channel MOSFET, 31 A, 200 V Enhancement, 3-Pin TO-263 FQB34N20LTM
- RS-stocknr.:
- 671-0898
- Fabrikantnummer:
- FQB34N20LTM
- Fabrikant:
- onsemi
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 671-0898
- Fabrikantnummer:
- FQB34N20LTM
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Series | QFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 31 A | |
| Maximum Drain Source Voltage (Vds) | 200 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-263 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.5 V | |
| Height | 4.83 mm | |
| Length | 10.67 mm | |
| Maximum Drain Source Resistance (Rds) | 75 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 3.13 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 55 nC | |
| Width | 9.65 mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Series QFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 31 A | ||
Maximum Drain Source Voltage (Vds) 200 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-263 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.5 V | ||
Height 4.83 mm | ||
Length 10.67 mm | ||
Maximum Drain Source Resistance (Rds) 75 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 3.13 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 55 nC | ||
Width 9.65 mm | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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