onsemi P-Channel MOSFET, 5.4 A, 60 V, 3-Pin DPAK FQD7P06TM
- RS-stocknr.:
- 671-1030
- Fabrikantnummer:
- FQD7P06TM
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,67
(excl. BTW)
€ 4,44
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,734 | € 3,67 |
| 50 - 95 | € 0,632 | € 3,16 |
| 100 - 495 | € 0,548 | € 2,74 |
| 500 - 995 | € 0,482 | € 2,41 |
| 1000 + | € 0,438 | € 2,19 |
*prijsindicatie
- RS-stocknr.:
- 671-1030
- Fabrikantnummer:
- FQD7P06TM
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.4 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 451 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 6.3 nC @ 10 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.4 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 451 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 6.3 nC @ 10 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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